Effects of surface treatments and metal work functions on electrical properties atp-GaN/metal interfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363912
Reference27 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
4. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
5. Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
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