Ti/Al/Pt/Au and Al ohmic contacts on Si-substrated GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1385189
Reference15 articles.
1. Ultraviolet and violet GaN light emitting diodes on silicon
2. InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off
3. FUNDAMENTAL TRANSITION IN THE ELECTRONIC NATURE OF SOLIDS
4. A review of the metal–GaN contact technology
5. Low resistance ohmic contacts on wide band‐gap GaN
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3. Demonstration of Annealing-free Metal-Insulator-Semiconductor (MIS) Ohmic Contacts on a GaN Substrate using Low Work-function Metal Ytterbium (Yb) and Al2O3 Interfacial Layer;2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2019-05
4. SiC and GaN Power Semiconductor Devices;Power Electronics Handbook;2018
5. Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN X Schottky Metal Structures for High-Power Applications;Journal of Electronic Materials;2016-04-27
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