Demonstration of Annealing-free Metal-Insulator-Semiconductor (MIS) Ohmic Contacts on a GaN Substrate using Low Work-function Metal Ytterbium (Yb) and Al2O3 Interfacial Layer-Reference-Cited by-同舟云学术

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Demonstration of Annealing-free Metal-Insulator-Semiconductor (MIS) Ohmic Contacts on a GaN Substrate using Low Work-function Metal Ytterbium (Yb) and Al2O3 Interfacial Layer

Published:2019-05 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
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Author:

Wu Tian-Li,Tseng Yang-Yan,Huang Chih-Fang,Chen Zih-Sin,Lin Chih-Chien,Chung Chung-Jen,Huang Po-Kai,Kao Kuo-Hsing

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8755810/8760305/08760323.pdf?arnumber=8760323

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstration of Ytterbium-Based Non-Alloyed Ohmic Contacts to n-GaN;2023 International Conference on Electrical Engineering and Photonics (EExPolytech);2023-10-19

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