Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN X Schottky Metal Structures for High-Power Applications-Reference-Cited by-同舟云学术

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Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN X Schottky Metal Structures for High-Power Applications

Published:2016-04-27 Issue:7 Volume:45 Page:3285-3289
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Hsieh Ting-En,Lin Yueh-Chin,Chu Chung-Ming,Chuang Yu-Lin,Huang Yu-Xiang,Shi Wang-Cheng,Dee Chang-Fu,Majlis Burhanuddin Yeop,Lee Wei-I,Chang Edward Yi

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-016-4534-1.pdf

Reference29 articles.

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4. U.K. Mishra, L. Shen, T.E. Kazior, and Y.F. Wu, Proc. IEEE 96, 287 (2008).

5. R. Gong, J. Wang, S. Liu, Z. Dong, M. Yu, C.P. Wen, Y. Cai, and B. Zhang, Appl. Phys. Lett. 97, 062115 (2010).

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2. Towards the understanding of the Ti/Al ratio role in solid-state reaction for ohmic contacts on n-GaN;Materials Science in Semiconductor Processing;2023-05

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4. Resonant excitation of infrared emission in GaN:(Mn,Mg);Physical Review B;2018-06-28

5. Role of thin Ti layer in formation mechanism of low temperature-annealed Ti/Al-based ohmic contact on AlGaN/GaN heterostructure;Semiconductor Science and Technology;2018-06-04

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