Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3479928
Reference13 articles.
1. Structural and electrical characterization of AuPdAlTi ohmic contacts to AlGaN∕GaN with varying Ti content
2. On the origin of stacking faults at the GaAs/ZnSe heterointerface
3. Nanoscale carrier transport in Ti∕Al∕Ni∕Au Ohmic contacts on AlGaN epilayers grown on Si(111)
4. Correlation of contact resistance with microstructure for Au/Ni/Al/Ti/AlGaN/GaN ohmic contacts using transmission electron microscopy
5. Comparative study of Ti∕Al∕Mo∕Au, Mo∕Al∕Mo∕Au, and V∕Al∕Mo∕Au ohmic contacts to AlGaN∕GaN heterostructures
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