Role of thin Ti layer in formation mechanism of low temperature-annealed Ti/Al-based ohmic contact on AlGaN/GaN heterostructure
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aac3c3/pdf
Reference25 articles.
1. The role of barrier layer on Ohmic performance of Ti∕Al-based contact metallizations on AlGaN∕GaN heterostructures
2. Formation mechanism of Ohmic contacts on AlGaN∕GaN heterostructure: Electrical and microstructural characterizations
3. Optimization of Ohmic contact fabrication technology to GaN-based heterostructures
4. Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With ${\rm Al}_{2}{\rm O}_{3}$ and ${\rm Si}_{3}{\rm N}_{4}/{\rm Al}_{2}{\rm O}_{3}$ Gate Dielectrics
5. Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WN X Schottky Metal Structures for High-Power Applications
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1. Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer;Applied Physics Letters;2024-01-01
2. Towards the understanding of the Ti/Al ratio role in solid-state reaction for ohmic contacts on n-GaN;Materials Science in Semiconductor Processing;2023-05
3. Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures;Semiconductor Science and Technology;2022-04-13
4. Process and characterization of ohmic contacts for beta-phase gallium oxide;Journal of Materials Research;2021-08-30
5. Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures;Superlattices and Microstructures;2020-11
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