Formation mechanism of Ohmic contacts on AlGaN∕GaN heterostructure: Electrical and microstructural characterizations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2903482
Reference34 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
3. Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n‐GaN
4. Interfacial reactions of Ti/n-GaN contacts at elevated temperature
5. Improved photoluminescence of 1.26μm InGaAs∕GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers
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