Improved photoluminescence of 1.26μm InGaAs∕GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2009048
Reference21 articles.
1. A comparison of photoluminescence properties of InGaAs/GaAs quantum dots with a single quantum well
2. Enhanced photoluminescence from GaAsSb quantum wells
3. Temperature dependent photoreflectance and photoluminescence characterization of GaInNAs∕GaAs single quantum well structures
4. Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers
5. Simulation of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1−xNx quantum-well lasers with various GaAs1−xNx strain compensated barriers
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1. Time-Resolved Photoluminescence of Metamorphic InGaAs Quantum Wells;Chinese Physics Letters;2009-09-29
2. On the long-wavelength optimization of highly strained InGaAs/GaAs quantum wells grown by metal–organic vapor-phase epitaxy;Journal of Crystal Growth;2008-06
3. Formation mechanism of Ohmic contacts on AlGaN∕GaN heterostructure: Electrical and microstructural characterizations;Journal of Applied Physics;2008-05
4. Control of homoepitaxial Si nanostructures by locally modified surface reactivity;Applied Physics Letters;2008-02-04
5. Anatomy-performance correlation in Ti-based contact metallizations on AlGaN∕GaN heterostructures;Journal of Applied Physics;2007-02
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