Enhanced photoluminescence from GaAsSb quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1759381
Reference15 articles.
1. A range-resolved Doppler imaging sensor based on fiber lasers
2. Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device design
3. 1.55-μm InP-lattice-matched VCSELs with AlGaAsSb-AlAsSb DBRs
4. Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasers
5. GaInNAs: a novel material for long-wavelength semiconductor lasers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The strain, energy band and photoluminescence of GaAs0.92Sb0·08/Al0.3Ga0.7As multiple quantum wells grown on GaAs substrate;Solid State Communications;2020-03
2. Improved photoluminescence of 1.26μm InGaAs∕GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers;Applied Physics Letters;2005-08-08
3. Monolithically Integrated Semiconductor Components for Coarse Wavelength Division Multiplexing;Frontiers in Optics;2005
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