Control of homoepitaxial Si nanostructures by locally modified surface reactivity
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2841673
Reference32 articles.
1. Surfactants in epitaxial growth
2. Influence of surfactants in Ge and Si epitaxy on Si(001)
3. Surfactant coverage and epitaxy of Ge on Ga‐terminated Si(111)
4. Surfactant effects of thallium in the epitaxial growth of indium arsenide on gallium arsenide(001)
5. Surfactant effect of bismuth in the MOVPE growth of the InAs quantum dots on GaAs
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2. Tungsten diffusion in silicon;Journal of Applied Physics;2014-01-07
3. Optimal surface functionalization of silicon quantum dots;The Journal of Chemical Physics;2008-06-28
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