Surfactant effects of thallium in the epitaxial growth of indium arsenide on gallium arsenide(001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370292
Reference27 articles.
1. Observation of Reentrant 2D to 3D Morphology Transition in Highly Strained Epitaxy: InAs on GaAs
2. Self-aggregation of quantum dots for very thin InAs layers grown on GaAs
3. Self-organized growth of quantum-dot structures
4. Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs
5. Optical investigation of the self-organized growth of InAs/GaAs quantum boxes
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Bismuth surfactant enhancement of surface morphology and film quality of MBE-grown GaSb(100) thin films over a wide range of growth temperatures;Journal of Vacuum Science & Technology A;2024-04-01
2. Application of Surfactants;Graduate Texts in Physics;2020
3. Novel BTlGaN semiconducting materials for infrared opto-electronic devices;Infrared Physics & Technology;2017-03
4. Nucleation and growth of Si on Pb monolayer covered Si(111) surfaces;Surface Science;2011-07
5. First-principles study of lattice dynamics in thallium-V compounds;Superlattices and Microstructures;2010-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3