Self-aggregation of quantum dots for very thin InAs layers grown on GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.R4213/fulltext
Reference21 articles.
1. Effect of strain on surface morphology in highly strained InGaAs films
2. Investigation of the epitaxial growth of InxGa1−xAs on GaAs(001) and extension of two‐dimensional–three‐dimensional growth mode transition
3. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
4. Critical layer thickness for self-assembled InAs islands on GaAs
5. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
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2. Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation;Journal of Applied Physics;2020-02-14
3. Ultrathin epitaxial InAs layer relaxation on cross-hatch stress fields;CrystEngComm;2016
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