Novel BTlGaN semiconducting materials for infrared opto-electronic devices
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference55 articles.
1. High‐brightness InGaN/AlGaN double‐heterostructure blue‐green‐light‐emitting diodes
2. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
3. High Output Power 365 nm Ultraviolet Light Emitting Diode of GaN-Free Structure
4. Group III-nitride lasers: a materials perspective
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