Surfactant effect of bismuth in the MOVPE growth of the InAs quantum dots on GaAs-Reference-Cited by-同舟云学术

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Surfactant effect of bismuth in the MOVPE growth of the InAs quantum dots on GaAs

Published:2000-10-17 Issue:4 Volume:11 Page:221-226
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Zvonkov B N,Karpovich I A,Baidus N V,Filatov D O,Morozov S V,Gushina Yu Yu

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/11/i=4/a=306/pdf

Reference19 articles.

1. Quantum dot heterostructures: Fabrication, properties, lasers (Review)

2. The present status of quantum dot lasers

3. Surfactants in epitaxial growth

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1. Epitaxial growth of GaInAsBi thin films on Si (001) substrate using pulsed laser deposition;Vacuum;2024-09

2. Growth of nanotextured thin films of GaInAsP and GaInAsSbBi solid solutions on GaP substrates by pulsed laser deposition;Nanosystems: Physics, Chemistry, Mathematics;2023-10-31

3. Surface morphology improvement by diethylzinc doping on metamorphic InAs on GaAs using MOVPE;Journal of Crystal Growth;2023-09

4. Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A;Semiconductor Science and Technology;2023-08-10

5. Exploring the formation of InAs(Bi)/GaAs QDs at two growth-temperature regimes under different Bi supply conditions;Applied Surface Science;2023-01

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