Ge(Sn) growth on Si(001) by magnetron sputtering
Author:
Funder
French-Algerian cooperation program PROFAS B+
Publisher
Elsevier BV
Subject
Materials Chemistry,Mechanics of Materials,General Materials Science
Reference79 articles.
1. Tunnelling-based ternary metal–oxide–semiconductor technology;Jeong;Nat. Electron.,2019
2. CMOS Future for Microelectronic Circuits: low power consumption of complementary metal-oxide-semiconductor integrated circuits drives next stage of ultraminiaturization;Robinson;Science,1984
3. Thin film: deposition, growth aspects, and characterization;Arunkumar,2015
4. Academic and industry research progress in germanium nanodevices;Pillarisetty;Nature,2011
5. Formation of copper silicides from Cu(100)/Si(100) and Cu(111)/Si(111) structures;Chang;J. Appl. Phys.,1990
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