Growth of single-crystalline GeSn films with high-Sn content on InP substrates by sputtering and rapid thermal annealing-Reference-Cited by-同舟云学术

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Growth of single-crystalline GeSn films with high-Sn content on InP substrates by sputtering and rapid thermal annealing

Published:2024-06 Issue: Volume:657 Page:159707
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Tan Chuhui,Ke Shaoying^ORCID,Lv Junhong^ORCID,Huang Yuan^ORCID,Peng Dongsheng,Duan Zhuochen,Wu Yujuan,Yang Jie^ORCID,Lin Feng,Wang Chong^ORCID

Publisher

Elsevier BV

Reference39 articles.

1. GeSn lateral p-i-n waveguide photodetectors for mid-infrared integrated photonics;Tsai;Opt Lett,2021

2. High Hole Mobility of Polycrystalline GeSn Layers Grown by Hot-Wire Chemical Vapor Deposition on Diamond Substrates;Buzynin;Phys. Status Solidi-Rapid Res. Lett.,2022

3. Improving carrier mobility of polycrystalline Ge by Sn doping;Moto;Sci. Rep.,2018

4. Possibility of increased mobility in Ge-Sn alloy system;Sau;Phys. Rev. B,2007

5. Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys;Elbaz;Nat. Photonics,2020

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Framework for Designing Efficient Eco-Friendly Broadband GeSn/SnS Photodetector Based on Light Trapping Engineering;Plasmonics;2024-08-01

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