Temperature dependent photoreflectance and photoluminescence characterization of GaInNAs∕GaAs single quantum well structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1805724
Reference61 articles.
1. Intrinsic limits on electron mobility in dilute nitride semiconductors
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3. Nitrogen-activated bowing of dilute In[sub y]Ga[sub 1−y]As[sub 1−x]N[sub x] based on photoreflectance studies
4. Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content
5. Optical properties and defects in GaAsN and InGaAsN films and quantum well structures
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