Optical properties and defects in GaAsN and InGaAsN films and quantum well structures-Reference-Cited by-同舟云学术

Optical properties and defects in GaAsN and InGaAsN films and quantum well structures

Published:2002-12 Issue:12 Volume:46 Page:2147-2153
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Polyakov A.Y,Smirnov N.B,Govorkov A.V,Botchkarev A.E,Nelson N.N,Fahmi M.M.E,Griffin J.A,Khan A,Noor Mohammad S,Johnstone D.K,Bublik V.T,Chsherbatchev K.D,Voronova M.I,Kasatochkin V.S

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron

2. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys

3. Localization and percolation in semiconductor alloys: GaAsN vs GaAsP

4. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

5. Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode

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