Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers-Reference-Cited by-同舟云学术

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Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers

Published:2005-04-27 Issue:6 Volume:20 Page:601-605
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chang Yi-An,Kuo Hao-Chung,Lu Chun-Yi,Kuo Yen-Kuang,Wang Shing-Chung

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. GaInNAs: a novel material for long-wavelength semiconductor lasers

2. Hydrogen-induced improvements in optical quality of GaNAs alloys

3. Effect of annealing on the In and N distribution in InGaAsN quantum wells

4. Localization and percolation in semiconductor alloys: GaAsN vs GaAsP

5. Quantum confined Stark effect in GaInNAs∕GaAs multiple quantum wells

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer;Journal of Semiconductors;2016-01

2. Optimum indium composition for (Ga,In)(N,As)∕GaAs quantum wells emitting beyond 1.5μm;Applied Physics Letters;2006-02-27

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