Effect of annealing on the In and N distribution in InGaAsN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1509122
Reference15 articles.
1. Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well
2. Recombination mechanisms in GaInNAs/GaAs multiple quantum wells
3. On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells
4. Effect of nitrogen on the temperature dependence of the energy gap inInxGa1−xAs1−yNy/GaAssingle quantum wells
5. Excitonic luminescence and absorption in dilute GaAs1−xNx alloy (x<0.3%)
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