Excitonic luminescence and absorption in dilute GaAs1−xNx alloy (x<0.3%)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118764
Reference9 articles.
1. Luminescence quenching and the formation of the GaP1−xNxalloy in GaP with increasing nitrogen content
2. Intermediate range between N-doped GaP and GaP1-xNx alloys: difference in optical properties
3. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
4. Photoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE
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4. Spatially resolved electronic structure of an isovalent nitrogen center in GaAs;PHYS REV B;2017
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