Photoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
2. The effect of As2and As4molecular beam species on photoluminescence of molecular beam epitaxially grown GaAs
3. Zeeman spectroscopy of the defect-induced bound-exciton lines in GaAs grown by molecular-beam epitaxy
4. Photoluminescence of nitrogen-doped VPE GaAs
5. Nitrogen pair luminescence in GaAs
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