Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response-Reference-Cited by-同舟云学术

Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response

Published:2014-12-21 Issue:23 Volume:116 Page:233703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lopes-Oliveira V.¹,Herval L. K. S.¹,Orsi Gordo V.¹,Cesar D. F.¹,de Godoy M. P. F.¹,Galvão Gobato Y.¹,Henini M.²,Khatab A.²³,Sadeghi M.⁴,Wang S.⁴,Schmidbauer M.⁵

Affiliation:

1. Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, São Paulo, Brazil

2. School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, NG7 2RD Nottingham, United Kingdom

3. National Institute of Laser Enhanced Sciences, Cairo University, Egypt

4. Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Goteborg, Sweden

5. Leibniz-Institute for Crystal Growth, Max-Born-Str. 2, D-12489 Berlin, Germany

Funder

CAPES

CNPQ

São Paulo Research Foundation (FAPESP)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4904357

Reference39 articles.

1. Band Anticrossing in GaInNAs Alloys

2. Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well

3. On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells

4. Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration

5. Photo-induced transient spectroscopy and in-plane photovoltage in GaInNAs/GaAs quantum wells

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