Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1362335
Reference17 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. High power CW operation of InGaAsN lasers at 1.3 [micro sign]m
3. Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers
4. Room-temperature pulsed operation of strained GaInNAs/GaAs double quantum well laser diode grown by metal organic chemical vapour deposition
5. Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy
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