Room-temperature pulsed operation of strained GaInNAs/GaAs double quantum well laser diode grown by metal organic chemical vapour deposition
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19981034?crawler=true&mimetype=application/pdf
Reference7 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Room-temperature continuous-wave operation of GaInNAs/GaAs laser diode
3. 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
4. Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition
5. Room-temperature pulsed operation of 1.3 [micro sign]m GaInNAs/GaAs laser diode
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1. The influences of electric field and temperature on state energies of a strong-coupling polaron in an asymmetric Gaussian potential quantum well;Chinese Journal of Physics;2018-04
2. Group III Nitrides;Springer Handbook of Electronic and Photonic Materials;2017
3. Nitrogen-related changes in exciton localization and dynamics in GaInNAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy;Applied Physics A;2014-10-01
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