Investigation on interface-related defects by photoluminescence of cubic (Al)GaN/AlN multi-quantum wells structures

Author:

Herval Leonilson K.S.,de Godoy Marcio P.F.,Wecker Tobias,As Donat J.

Funder

Programa de bolsa de doutorado no exterior - PDSE

FAPEMIG

Deutsche Forschungsgemeinschaft

Centre for Optoelectronics and Photonics Paderborn

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference26 articles.

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3. Group III – nitride semiconductors: preeminent materials for modern electronic and optoelectronic applications;Acharya;Himal. Phys.,2015

4. Incorporation of germanium for n-type doping of cubic GaN;Deppe;Phys. Status Solidi (B),2017

5. Linear and nonlinear behaviour of near-IR intersubband transitions of cubic GaN/AlN multi quantum well structures;Wecker;J. Cryst. Growth,2017

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