On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1354153
Reference20 articles.
1. Metalorganic chemical vapor deposition of GaInNAs lattice matched to GaAs for long-wavelength laser diodes
2. Nonlinear dependence of N incorporation on In content in GaInNAs
3. Nitrogen incorporation rate, optimal growth temperature, and AsH3-flow rate in GaInNAs growth by gas-source MBE using N-radicals as an N-source
4. Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition
5. GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy
Cited by 128 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of spontaneous superlattice ordering on the luminescence properties of the MOVPE grown AlGaAs/GaAs (100) heterostructure;Optical Materials;2024-04
2. Optical signatures of suppressed carrier localization in encapsulated WSe2 monolayer;AIP Advances;2023-06-01
3. Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate;Journal of Luminescence;2022-06
4. Growth temperature impact on MOVPE-grown BInGaAs/GaAs QWs designed for optoelectronic applications;Journal of Materials Science: Materials in Electronics;2021-07-18
5. Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate;Scientific Reports;2020-01-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3