Nitrogen incorporation rate, optimal growth temperature, and AsH3-flow rate in GaInNAs growth by gas-source MBE using N-radicals as an N-source
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
2. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
3. 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
4. Room-temperature pulsed operation of 1.3 [micro sign]m GaInNAs/GaAs laser diode
5. GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes
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1. Infrared transitions between hydrogenic states in GaInNAs/GaAs quantum wells;International Journal of Modern Physics B;2016-09-06
2. Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells;Applied Physics Letters;2012-01-09
3. Controlled nitrogen incorporation in GaNSb alloys;AIP Advances;2011-09
4. Impact of Nitrogen on the Lasing Characteristic of 1.31 μm GaInNAs Quantum Well Lasers;AIP Conference Proceedings;2011
5. Growth of GaInNAs and 1.3μm edge emitting lasers by molecular beam epitaxy;Journal of Crystal Growth;2009-03
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