Growth of GaInNAs and 1.3μm edge emitting lasers by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Critical layer thickness in InzxGa1−xAs/GaAs quantum wells studied by photoluminescence and transmission electron microscopy
2. Initial strain relaxation and optical quality in lattice mismatched in GaAs/GaAs single quantum wells
3. Temperature‐dependent transition from two‐dimensional to three‐dimensional growth in highly strained InxGa1−xAs/GaAs (0.36≤x≤1) single quantum wells
4. Long-wavelength InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy
5. Highly strained 1.24-μm InGaAs/GaAs quantum-well lasers
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1. Continuous wave operation of GaAsBi microdisk lasers at room temperature with large wavelengths ranging from 127 to 141 μm;Photonics Research;2019-04-12
2. 1.142 μm GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy;ACS Photonics;2017-06-07
3. Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application;Crystals;2017-02-24
4. MBE of dilute-nitride optoelectronic devices;Molecular Beam Epitaxy;2013
5. Thermal dependence of the optical gain and threshold current density of GaInNAs/GaAs/AlGaAs quantum well lasers;Journal of Applied Physics;2011-12-15
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