GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121378
Reference11 articles.
1. Low-pressure MOVPE growth and characterization of strained-layer InGaAs-InGaAsP quantum well lasers
2. Temperature dependence of threshold of InGaAsP/InP double‐heterostructure lasers and Auger recombination
3. Analysis of threshold temperature characteristics for InGaAsP/InP double heterojunction lasers
4. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
5. Continuous-wave operation of long-wavelength GaInNAs/GaAs quantum well laser
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