Structural and optical characteristics of InAs0.02Sb0.82N0.16 thick epilayers grown by melt epitaxy-Reference-Cited by-同舟云学术

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Structural and optical characteristics of InAs0.02Sb0.82N0.16 thick epilayers grown by melt epitaxy

Published:2024-03-18 Issue: Volume:120 Page:53
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Container-title:Advanced Fiber Laser Conference (AFL2023)
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Author:

Gao Yuzhu,Chen Zuntian,Hayakawa Yasuhiro

Publisher

SPIE

Reference15 articles.

1. Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors;Yang;Appl. Phys. Lett.,2022

2. GaAs/GaInNAs core-multishell nanowires with a triple quantum-well structure emitting in the telecommunication range

3. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

4. Luminescence of as-grown and thermally annealed GaAsN/GaAs

5. GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy

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