Temperature dependence of threshold of InGaAsP/InP double‐heterostructure lasers and Auger recombination
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92380
Reference9 articles.
1. Temperature Sensitive Threshold Current of InGaAsP–InP Double Heterostructure Lasers
2. Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (GaIn)(AsP)/InP d.h. lasers
3. Temperature dependence of threshold and electrical characteristics of InGaAsP-InP d.h. lasers
4. Auger effect in semiconductors
5. One-dimensional overlap functions and their application to Auger recombination in semiconductors
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