Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126308
Reference18 articles.
1. Band Anticrossing in GaInNAs Alloys
2. Pressure and temperature dependence of the absorption edge of a thick Ga0.92In0.08As0.985N0.015 layer
3. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
4. Photopumped lasing at 1.25 μm of GaInNAs-GaAs multiple-quantum-well vertical-cavity surface-emitting lasers
5. Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime
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