Asymmetric and symmetric interfaces in type II MWIR InAs/GaSb superlattices
Author:
Funder
Narodowe Centrum Badań i Rozwoju
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,General Physics and Astronomy,Condensed Matter Physics,Surfaces and Interfaces,General Chemistry
Reference51 articles.
1. A new semiconductor superlattice;Sai-Halasz;Appl. Phys. Lett.,1977
2. InAs-GaSb superlattice Energy structure and its semiconductor-semimetals transition;Sai-Halasz;Phys. Rev.,1978
3. Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices;Hoang;Appl. Phys. Lett.,2012
4. Blueshift of bandgap energy and reduction of non-radiative defect density due to precise control of InAs-on-GaSb interface in type-II InAs/GaSb superlattice;Jasik;J. Appl. Phys.,2011
5. Characterization of an InAs/GaSb type-II superlattice barrier photodetector operating in the LWIR domain;Alchaar;AIP Adv.,2019
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