Blueshift of bandgap energy and reduction of non-radiative defect density due to precise control of InAs-on-GaSb interface in type-II InAs/GaSb superlattice-Reference-Cited by-同舟云学术

Blueshift of bandgap energy and reduction of non-radiative defect density due to precise control of InAs-on-GaSb interface in type-II InAs/GaSb superlattice

Published:2011-12-15 Issue:12 Volume:110 Page:123103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Jasik A.,Sankowska I.,Pierścińska D.,Regiński K.,Pierściński K.,Kubacka-Traczyk J.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3671024

Reference16 articles.

1. Material considerations for third generation infrared photon detectors

2. Compositional abruptness at the InAs-on-GaSb interface: optimizing growth by using the Sb desorption signature

3. Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy

4. MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection

5. Characterisation and optimisation of MBE grown arsenide/antimonide interfaces

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