Compositional abruptness at the InAs-on-GaSb interface: optimizing growth by using the Sb desorption signature
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference4 articles.
1. Study of interface asymmetry in InAs–GaSb heterojunctions
2. Scanning tunneling microscopy of InAs/GaSb superlattices with various growth conditions
3. Cross-sectional scanning tunneling microscopy characterization of molecular beam epitaxy grown InAs/GaSb/AlSb heterostructures for mid-infrared interband cascade lasers
4. In situ composition control of III-As1 − xSbx alloys during molecular beam epitaxy using line-of-sight mass spectrometry
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4. Growth interruption strategies for interface optimization in GaAsSb/GaAsN type-II superlattices;Applied Surface Science;2022-12
5. Effect of position-dependent effective mass on electron tunneling of InAs/GaSb type-II superlattice having triangular and parabolic geometries;Optics & Laser Technology;2021-06
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