Optimization of Growth Parameters for Enhancing Crystal Quality of Inas/Gasb Type Ii Superlattice Grown Through Molecular Beam Epitaxy

Author:

Liu Wei-Sheng,Chang Po Hao,GURURAJAN BALAJI,Ko Tsun-Jie,Hsu Ming-En,Liao Yung-Jyun,Chyi Jen-Inn

Publisher

Elsevier BV

Reference29 articles.

1. Interface Engineered MBE Grown InAs/GaSb Based Type-II Superlattice Heterostructures;Puspashree Mishra;Journal of Alloys and Compounds,2021

2. Dark Current Suppression in Type II InAs?GaSb Superlattice Long Wavelength Infrared Photodiodes with M-Structure Barrier;Binh-Minh Nguyen;Applied Physics Letters,2007

3. nBn Detector, an Infrared Detector with Reduced Dark Current and Higher Operating Temperature;S Maimon;Applied Physics Letters,2006

4. Formation Energies of Native Point Defects in Strained-Layer Superlattices;Zhi - Yu;AIP Advances,2017

5. Direct Growth of Type II InAs/GaSb Superlattice MWIR Photodetector on GaAs Substrate;U?ur Serincan;Superlattices and Microstructures,2018

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