Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy-Reference-Cited by-同舟云学术

Optical and structural investigations of intermixing reactions at the interfaces of InAs/AlSb and InAs/GaSb quantum wells grown by molecular-beam epitaxy

Published:1995-05 Issue: Volume:150 Page:858-862
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Schmitz J.,Wagner J.,Fuchs F.,Herres N.,Koidl P.,Ralston J.D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors

2. A complementary heterostructure field effect transistor technology based on InAs/AlSb/GaSb

3. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes

4. Proposal for strained type II superlattice infrared detectors

5. Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface

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