Interface Design Development for Growing Short-Period InAs/GaSb Superlattices by Molecular-Beam Epitaxy
Author:
Publisher
Allerton Press
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.3103/S1068335623090051.pdf
Reference31 articles.
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2. Sai-Halasz, G.A., Tsu, R., and Esaki, L., A new semiconductor superlattice, Appl. Phys. Lett., 1977, vol. 30, no. 12, pp. 651–653. https://doi.org/10.1063/1.89273
3. Rogalski, A., History of infrared detectors, Opto-Electron. Rev., 2012, vol. 20, no. 3, pp. 279–308. https://doi.org/10.2478/s11772-012-0037-7
4. Ting, D.Z-Y., Soibel, A., Hӧglund, L., Nguyen, J., Hill, C.J., Khoshakhlagh, A., and Gunapala, S.D., Chapter 1—Type-II Superlattice Infrared Detectors, Semiconductors and Semimetals, 2011, vol. 84, pp. 1–57. https://doi.org/10.1016/B978-0-12-381337-4.00001-2
5. Grein, C.H., Cruz, H., Flatte, M.E., and Ehrenreich, H., Theoretical performance of very long wavelength InAs/InxGa1−xSb superlattice based infrared detectors, Appl. Phys. Lett., 1994, vol. 65, no. 20, pp. 2530–2532. https://doi.org/10.1063/1.112626
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