Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345426
Reference10 articles.
1. Electrical properties and band offsets of InAs/AlSbn‐Nisotype heterojunctions grown on GaAs
2. IIA-7 an AlSb/InAs/AlSb quantum well HFT
3. Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells
4. Carrier densities in InAs–Ga(Al)Sb(As) quantum wells
5. Interfacial properties of (Al,Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxy
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