High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells

Author:

Bergeron E. Annelise12ORCID,Sfigakis F.134ORCID,Elbaroudy A.25ORCID,Jordan A. W. M.14ORCID,Thompson F.1ORCID,Nichols George12ORCID,Shi Y.256ORCID,Tam Man Chun56ORCID,Wasilewski Z. R.12356ORCID,Baugh J.12346ORCID

Affiliation:

1. Institute for Quantum Computing, University of Waterloo 1 , Waterloo, Ontario N2L 3G1, Canada

2. Department of Physics, University of Waterloo 2 , Waterloo, Ontario N2L 3G1, Canada

3. Northern Quantum Lights Inc 3 ., Waterloo, Ontario N2B 1N5, Canada

4. Department of Chemistry, University of Waterloo 4 , Waterloo, Ontario N2L 3G1, Canada

5. Department of Electrical and Computer Engineering, University of Waterloo 5 , Waterloo, Ontario N2L 3G1, Canada

6. Waterloo Institute for Nanotechnology, University of Waterloo 6 , Waterloo, Ontario N2L 3G1, Canada

Abstract

We report on transport characteristics of field effect two-dimensional electron gases (2DEGs) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus is observed to filling factor ν = 2 in magnetic fields of up to B = 18 T, at electron densities up to 8 ×1011/cm2. Peak mobility is 11 000 cm2/Vs at 2 ×1012/cm2. Large Rashba spin–orbit coefficients up to 124 meV Å are obtained through weak anti-localization measurements. Proximitized superconductivity is demonstrated in Nb-based superconductor-normal-superconductor (SNS) junctions, yielding 78%–99% interface transparencies from superconducting contacts fabricated ex situ (post-growth), using two commonly used experimental techniques for measuring transparencies. These transparencies are on a par with those reported for epitaxially grown superconductors. These SNS junctions show characteristic voltages IcRn up to 870 μV and critical current densities up to 9.6 μA/μm, among the largest values reported for Nb-InAs SNS devices.

Funder

Canada First Research Excellence Fund

Natural Sciences and Engineering Research Council of Canada

Canada Foundation for Innovation

Innovation, Science and Economic Development Canada

Ontario Ministry of Research and Innovation

Publisher

AIP Publishing

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