Design and performance of GaSb-based quantum cascade detectors
Author:
Giparakis Miriam1ORCID, Windischhofer Andreas1ORCID, Isceri Stefania1ORCID, Schrenk Werner2ORCID, Schwarz Benedikt1ORCID, Strasser Gottfried12ORCID, Andrews Aaron Maxwell1ORCID
Affiliation:
1. Institute of Solid State Electronics , TU Wien , Gußhausstraße 25, 1040 Vienna , Austria 2. Center for Micro- and Nanostructures , TU Wien , Gußhausstraße 25, 1040 Vienna , Austria
Abstract
Abstract
InAs/AlSb quantum cascade detectors (QCDs) grown strain-balanced on GaSb substrates are presented. This material system offers intrinsic performance-improving properties, like a low effective electron mass of the well material of 0.026 m
0, enhancing the optical transition strength, and a high conduction band offset of 2.28 eV, reducing the noise and allowing for high optical transition energies. InAs and AlSb strain balance each other on GaSb with an InAs:AlSb ratio of 0.96:1. To regain the freedom of a lattice-matched material system regarding the optimization of a QCD design, submonolayer InSb layers are introduced. With strain engineering, four different active regions between 3.65 and 5.5 µm were designed with InAs:AlSb thickness ratios of up to 2.8:1, and subsequently grown and characterized. This includes an optimized QCD design at 4.3 µm, with a room-temperature peak responsivity of 26.12 mA/W and a detectivity of 1.41 × 108 Jones. Additionally, all QCD designs exhibit higher-energy interband signals in the mid- to near-infrared, stemming from the InAs/AlSb type-II alignment and the narrow InAs band gap.
Funder
H2020 European Research Council Austrian Development Agency European Office of Aerospace Research and Development
Publisher
Walter de Gruyter GmbH
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology
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