Interface atomic structures in a cadmium arsenide/III–V semiconductor heterostructure

Abstract

The interface atomic structure between an epitaxial thin film of the prototype topological semimetal cadmium arsenide (Cd3As2) and a III–V semiconductor layer is investigated using high-angle annular dark-field imaging in an aberration-corrected scanning transmission electron microscope. We find that the interface unit cell adopts a defined stoichiometry that is CdSb-like, which is achieved through the insertion of periodically arranged Cd vacancies in the terminating Cd-plane of Cd3As2. This interface stoichiometry is consistent with the Sb-termination of the III–V layer and the fact that CdSb is the thermodynamically stable phase in the Cd–Sb binary system. We find at least two distinct alignments of the film with respect to the buffer layer, which are characterized by a 14100Cd3As2 shift parallel to the interface. We show that steps of half unit cell height in the III–V layer can produce these distinct interface structures.