Electrical properties and band offsets of InAs/AlSbn‐Nisotype heterojunctions grown on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101233
Reference15 articles.
1. In1−xGaxAs‐GaSb1−yAsyheterojunctions by molecular beam epitaxy
2. Electronic properties of InAsGaSb superlattices
3. X‐ray photoemission core level determination of the GaSb/AlSb heterojunction valence‐band discontinuity
4. Spectroscopic determination of the band discontinuity in GaSb/AlSb multiple-quantum-well structures
5. Electron densities in InAs–AlSb quantum wells
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