In1−xGaxAs‐GaSb1−yAsyheterojunctions by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89609
Reference11 articles.
1. Photoelectric Properties of Cleaved GaAs, GaSb, InAs, and InSb Surfaces; Comparison with Si and Ge
2. A new semiconductor superlattice
3. Structures Grown by Molecular Beam Epitaxy
4. Interdiffusion between GaAs and AlAs
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