Selective-Area Growth of Vertical InGaAs/GaSb Core–Shell Nanowires on Silicon and Dual Switching Properties
Author:
Affiliation:
1. Graduate School of Information Science and Technology, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan
2. Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, North 13 West 8, Sapporo 060-0813, Japan
Funder
Japan Society for the Promotion of Science
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c05613
Reference21 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
2. In1−xGaxAs‐GaSb1−yAsyheterojunctions by molecular beam epitaxy
3. Demonstration of GaAsSb/InAs nanowire backward diodes grown using position-controlled vapor–liquid–solid method
4. A Self-Aligned Gate-Last Process Applied to All-III–V CMOS on Si
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1. Strain-induced modulation of the band structure of GaAs/GaSb/GaAs core-dual-shell nanowires;Vacuum;2024-10
2. Strain-Induced Modulation of the Band Structure of Gaas/Gasb/Gaas Core-Dual-Shell Nanowires;2024
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