Demonstration of GaAsSb/InAs nanowire backward diodes grown using position-controlled vapor–liquid–solid method
Author:
Funder
Japan Science and Technology Agency
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/11/i=2/a=025001/pdf
Reference27 articles.
1. Type II GaAsxSb1−x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
2. Formation of the Axial Heterojunction in GaSb/InAs(Sb) Nanowires with High Crystal Quality
3. InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors
4. Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at Vds = 0.3 V
5. Integration of III–V nanowires for the next RF- and logic technology generation
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1. Selective-Area Growth of Vertical InGaAs/GaSb Core–Shell Nanowires on Silicon and Dual Switching Properties;ACS Nano;2023-08-24
2. Review on GaAsSb nanowire potentials for future 1D heterostructures: Properties and applications;Materials Today Communications;2021-09
3. III–V nanowire backward diodes with high sensitivity above 1 MV W−1 for low-power microwave energy harvesting;Japanese Journal of Applied Physics;2021-02-09
4. Improved microwave sensitivity to 706 kV/W by using p-GaAsSb/n-InAs nanowire backward diodes for low-power energy harvesting at zero bias;AIP Advances;2020-08-01
5. Achieving a high breakdown voltage for GaAsSb-based backward diodes using the carrier depletion effect originating from nanowires;Japanese Journal of Applied Physics;2020-02-06
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