Formation of the Axial Heterojunction in GaSb/InAs(Sb) Nanowires with High Crystal Quality-Reference-Cited by-同舟云学术

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Formation of the Axial Heterojunction in GaSb/InAs(Sb) Nanowires with High Crystal Quality

Published:2011-09-21 Issue:10 Volume:11 Page:4588-4593
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Ek Martin¹,Borg B. Mattias²,Dey Anil W.³,Ganjipour Bahram²,Thelander Claes²,Wernersson Lars-Erik³,Dick Kimberly A.¹²

Affiliation:

1. nCHREM/Polymer & Materials Chemistry, Lund University, Box 124, S-221 00 Lund, Sweden

2. Solid State Physics, Lund University, Box 118, S-221 00, Lund, Sweden

3. Department of Electrical- and Information Technology, Lund University, Box 118, S-221 00, Lund, Sweden

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg200829q

Reference32 articles.

1. Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires

2. Single-electron transistors in heterostructure nanowires

3. The Morphology of Axial and Branched Nanowire Heterostructures

4. Novel Growth Phenomena Observed in Axial InAs/GaAs Nanowire Heterostructures

5. Transition region width of nanowire hetero- and pn-junctions grown using vapor–liquid–solid processes

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1. Fabrication of Single‐Crystalline InSb‐on‐Insulator by Rapid Melt Growth;physica status solidi (a);2021-11-05

2. Band structure and end states in InAs/GaSb core-shell-shell nanowires;Physical Review B;2020-11-30

3. Abrupt degenerately-doped silicon nanowire tunnel junctions;Nanotechnology;2020-07-21

4. Electron channelling: challenges and opportunities for compositional analysis of nanowires by TEM;Nanotechnology;2020-06-22

5. Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio;Journal of Crystal Growth;2019-09

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