Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires-Reference-Cited by-同舟云学术

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Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires

Published:2006-12-08 Issue:1 Volume:18 Page:015504
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Larsson Magnus W,Wagner Jakob B,Wallin Mathias,Håkansson Paul,Fröberg Linus E,Samuelson Lars,Wallenberg L Reine

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/18/i=1/a=015504/pdf

Reference32 articles.

1. Nanowire resonant tunneling diodes

2. Single-electron transistors in heterostructure nanowires

3. Tunable effectivegfactor in InAs nanowire quantum dots

4. One-dimensional heterostructures in semiconductor nanowhiskers

5. Empirical fit to band discontinuities and barrier heights in III–V alloy systems

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