Band structure and end states in InAs/GaSb core-shell-shell nanowires
Author:
Funder
Vetenskapsrådet
Knut och Alice Wallenbergs Stiftelse
Lunds Universitet
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.102.195434/fulltext
Reference31 articles.
1. Quantum Spin Hall Effect in Inverted Type-II Semiconductors
2. Evidence for Helical Edge Modes in InvertedInAs/GaSbQuantum Wells
3. Edge transport in the trivial phase of InAs/GaSb
4. Colloquium: Topological insulators
5. Extracting band structure characteristics of GaSb/InAs core-shell nanowires from thermoelectric properties
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1. Crystal structure analysis of self-catalyzed InAs nanowire grown by MOCVD;Journal of Alloys and Compounds;2024-06
2. Self-Consistent Schrödinger-Poisson Study of Electronic Properties of GaAs Quantum Well Wires with Various Cross-Sectional Shapes;Nanomaterials;2021-05-05
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